PART |
Description |
Maker |
4N70L-TF1-T 4N70G-TF1-T 4N70L-TF3-T |
4 Amps, 700 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
3N70L-TN3-R 3N70G-TN3-R 3N70L-TM3-T 3N70G-TM3-T |
3 AMPS, 700 VOLTS N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
MGSF2N02E MGSF2N02ELT1 MGSF2N02ELT1G MGSF2N02ELT3 |
2.8 Amps, 20 Volts, N−Channel SOT−23 2.8 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB 2.8 Amps, 20 Volts, N-Channel SOT-23 2.8 Amps, 20 Volts, N−Channel SOT−23 Power MOSFET 2.8 Amps, 20 Volts
|
ONSEMI[ON Semiconductor]
|
NTB90N02 NTB90N02T4 NTP90N02 |
Power MOSFET 90 Amps / 24 Volts TV 18C 14#22D 4#8(TWINAX) PIN 90 A, 24 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 90 Amps, 24 Volts Power MOSFET 90 Amps 24 Volts
|
ONSEMI[ON Semiconductor]
|
MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压,点火绝缘栅双极型晶体管(D2PAK封装 点火IGBT一十九安培50伏特,(9A50V钳位电压,点火绝缘栅双极型晶体管(采用D2PAK封装)) Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压,点火绝缘栅双极型晶体管(TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
MTW32N20E MTW32N20E-D |
Power MOSFET 32 Amps, 200 Volts N-Channel TO-247 Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET)
|
ON Semiconductor
|
NTP18N06L NTB18N06LT4 NTB18N06LT4G NTB18N06L |
Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK) 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 15 Amps, 60 Volts, Logic Level (N−Channel TO−220 and DPAK) Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 Pak
|
Microsemi, Corp. ONSEMI[ON Semiconductor]
|
1N60A |
0.5 Amps, 600 Volts N-CHANNEL MOSFET
|
UTC[Unisonic Technologies]
|
MMSF4P01HD-D |
Power MOSFET 4 Amps, 12 Volts P-Channel SO-8
|
ON Semiconductor
|
UT85N03L-TN3-T UT85N03L-TA3-T UT85N03G-TA3-T UT85N |
85 Amps, 30 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
50N06G-TA3-T 50N06L-TA3-T 50N06L-TN3-R 50N06L-TF3- |
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
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